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The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates

Li, C.R.; Tanner, B.K.; Ashenford, D.E.; Hogg, J.H.C.; Lunn, B.

Authors

C.R. Li

D.E. Ashenford

J.H.C. Hogg

B. Lunn



Citation

Li, C., Tanner, B., Ashenford, D., Hogg, J., & Lunn, B. (1998). The effect of an interfacial layer on the relaxation of CdMnTe/CdTe multiple quantum well structures on InSb substrates. Semiconductor Science and Technology, 13, 746-749

Journal Article Type Article
Publication Date 1998
Journal Semiconductor Science and Technology
Print ISSN 0268-1242
Electronic ISSN 1361-6641
Publisher IOP Publishing
Volume 13
Pages 746-749
Public URL https://durham-repository.worktribe.com/output/1587709
Publisher URL http://adsabs.harvard.edu/cgi-bin/nph-bib_query?bibcode=1998SeScT..13..746L&db_key=PHY



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