DT Hughes
An investigation of graded and uniform base Ge<SUB>x</SUB>Si<SUB>1-x</SUB> HBTs using a Monte Carlo simulation.
Hughes, DT; Abram, RA; Kelsall, RW
Citation
Hughes, D., Abram, R., & Kelsall, R. (1995). An investigation of graded and uniform base GexSi1-x HBTs using a Monte Carlo simulation. IEEE Transactions on Electron Devices, 42, 201-208
| Journal Article Type | Article |
|---|---|
| Publication Date | 1995 |
| Journal | IEEE Transactions on Electron Devices |
| Print ISSN | 0018-9383 |
| Electronic ISSN | 1557-9646 |
| Publisher | Institute of Electrical and Electronics Engineers |
| Volume | 42 |
| Pages | 201-208 |
| Public URL | https://durham-repository.worktribe.com/output/1581410 |
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