Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers

Walmsley, M; Abram, RA

Abstract

Recent pump probe measurements of the fast optical response of semiconductor laser amplifiers are modelled using a density matrix approach in the relaxation approximation. The results obtained with the model in a variety of situations covering the three regimes below, at and above transparency are examined in terms of the optical response and the underlying carrier dynamics. The essential features of the optical response are explained using a simple physical picture and good qualitative agreement with experiment is demonstrated.

Citation

Walmsley, M., & Abram, R. (1997). Carrier dynamics model of fast refractive index changes in semiconductor laser amplifiers. IEE proceedings. Optoelectronics, 144(4), 189-196. https://doi.org/10.1049/ip-opt%3A19970510

• Journal Article Type: Article
• Publication Date: Aug 1, 1997
• Deposit Date: Dec 16, 2010
• Journal: IEE proceedings. Optoelectronics.
• Print ISSN: 1350-2433
• Electronic ISSN: 1359-7078
• Publisher: Institution of Engineering and Technology (IET)
• Peer Reviewed: Peer Reviewed
• Volume: 144
• Issue: 4
• Pages: 189-196
• DOI: https://doi.org/10.1049/ip-opt%3A19970510
• Keywords: Laser theory, Matrix algebra, Refractive index, Semiconductor device models, Semiconductor lasers.
• Public URL: https://durham-repository.worktribe.com/output/1581098