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Metal-insulator Transition In The Persistent Photoconductor Cd1-xMnxTe : In

Leighton, C.; Terry, I.; Becla, P.


C. Leighton

P. Becla


Persistent photoconductivity has been used to probe the metal-insulator transition in the diluted magnetic semiconductor Cd1 − xMnxTe:In. We have measured the d.c. conductivity of Cd0.92Mn0.08Te:In with tunable photogenerated carrier concentration, from the insulating phase up to ~ 1.2nc in the same sample. In the insulating phase, Efros-Shklovskii variable range hopping conduction is observed. In the metallic phase the temperature dependence of the conductivity is adequately described by quantum corrections to the zero-temperature conductivity due to the effects of electron-electron interaction and weak localization. In the critical region the scaling theory of electron localization has been applied. We observe a critical carrier concentration ~ 2.3 × 10^17 cm^−3, and a critical conductivity exponent close to one.


Leighton, C., Terry, I., & Becla, P. (1998). Metal-insulator Transition In The Persistent Photoconductor Cd1-xMnxTe : In. European Physical Society Letters, 42(1), 67-72.

Journal Article Type Article
Acceptance Date Feb 5, 1998
Online Publication Date Apr 1, 1998
Publication Date 1998-04
Journal Europhysics Letters
Print ISSN 0295-5075
Electronic ISSN 1286-4854
Publisher IOP Publishing
Peer Reviewed Peer Reviewed
Volume 42
Issue 1
Pages 67-72