Metal-insulator Transition In The Persistent Photoconductor Cd1-xMnxTe : In

Leighton, C.; Terry, I.; Becla, P.

Abstract

Persistent photoconductivity has been used to probe the metal-insulator transition in the diluted magnetic semiconductor Cd1 − xMnxTe:In. We have measured the d.c. conductivity of Cd0.92Mn0.08Te:In with tunable photogenerated carrier concentration, from the insulating phase up to ~ 1.2nc in the same sample. In the insulating phase, Efros-Shklovskii variable range hopping conduction is observed. In the metallic phase the temperature dependence of the conductivity is adequately described by quantum corrections to the zero-temperature conductivity due to the effects of electron-electron interaction and weak localization. In the critical region the scaling theory of electron localization has been applied. We observe a critical carrier concentration ~ 2.3 × 10^17 cm^−3, and a critical conductivity exponent close to one.

Citation

Leighton, C., Terry, I., & Becla, P. (1998). Metal-insulator Transition In The Persistent Photoconductor Cd1-xMnxTe : In. European Physical Society Letters, 42(1), 67-72. https://doi.org/10.1209/epl/i1998-00553-2

• Journal Article Type: Article
• Acceptance Date: Feb 5, 1998
• Online Publication Date: Apr 1, 1998
• Publication Date: 1998-04
• Journal: Europhysics Letters
• Print ISSN: 0295-5075
• Electronic ISSN: 1286-4854
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 42
• Issue: 1
• Pages: 67-72
• DOI: https://doi.org/10.1209/epl/i1998-00553-2
• Public URL: https://durham-repository.worktribe.com/output/1580925