A pentacene-based organic thin film memory transistor

Mabrook, MF; Yun, YJ; Pearson, C; Zeze, DA; Petty, MC

Abstract

An organic memory device based on a pentacene thin film transistor is demonstrated. Gold nanoparticles have been used as the charge storage elements while a thin film of polymethylmethacrylate formed the gate insulator. The electrical characteristics and the memory behavior of the organic thin film memory transistor (OTFMT) are reported. Under an appropriate gate bias (1 s pulses), the gold nanoparticles are charged and discharged, resulting in significant threshold voltage shifts of the OTFMT. The detailed programing and erasing procedures are reported.

Citation

Mabrook, M., Yun, Y., Pearson, C., Zeze, D., & Petty, M. (2009). A pentacene-based organic thin film memory transistor. Applied Physics Letters, 94(17), Article 173302. https://doi.org/10.1063/1.3126021

• Journal Article Type: Article
• Publication Date: Apr 27, 2009
• Deposit Date: Oct 23, 2012
• Publicly Available Date: Oct 29, 2012
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 94
• Issue: 17
• Article Number: 173302
• DOI: https://doi.org/10.1063/1.3126021
• Public URL: https://durham-repository.worktribe.com/output/1558904