Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric.

Yun, Y; Pearson, C; Petty, MC

Abstract

Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric. A bootstrapped inverter incorporating pentacene organic thin-film transistors (OTFTs), with poly(methyl methacrylate) as the gate dielectric, has been designed, fabricated and tested. The inverter uses capacitive coupling and bootstrapping effects, and exhibits superior performance to the normal diode-connected load inverter. The pentacene OTFTs used for the inverter possess a field-effect mobility of 0.32 cm(2)/V/s, a threshold voltage of -10.0 V, a subthreshold slope of 1.5 V per decade and an on/off current ratio of 2.2 x 10(6). The inverter has a 30 mu s rise time and a 450 ms fall time, at an operating frequency of 1 kHz and 30 V drive voltage.

Citation

Yun, Y., Pearson, C., & Petty, M. (2009). Bootstrapped inverter using a pentacene thin-film transistor with a poly(methyl methacrylate) gate dielectric. IET Circuits, Devices and Systems, 3(4), 182-186

• Journal Article Type: Article
• Publication Date: 2009-08
• Journal: IET Circuits, Devices and Systems
• Print ISSN: 1751-858X
• Electronic ISSN: 1751-8598
• Publisher: Institution of Engineering and Technology (IET)
• Peer Reviewed: Peer Reviewed
• Volume: 3
• Issue: 4
• Pages: 182-186
• Public URL: https://durham-repository.worktribe.com/output/1547902