Memory effects in MIS structures based on silicon and polymethylmethacrylate with nanoparticle charge-storage elements.

Mabrook, M.F.; Jombert, A.S.; Machin, S.E.; Pearson, C.; Kolb, D.; Coleman, K.S.; Zeze, D.A.; Petty, M.C.

Abstract

We report on the electrical behaviour of metal–insulator–semiconductor (MIS) structures fabricated on p-type silicon substrates and using polymethylmethacrylate (PMMA) as the dielectric. Gold nanoparticles, single-wall carbon nanotubes and C60, deposited at room temperature, were used as charge-storage elements. In all cases, the MIS devices containing the nanoparticles exhibited hysteresis in their capacitance versus voltage characteristics, with a memory window depending on the range of the voltage sweep. This hysteresis was attributed to the charging and discharging of the nanoparticles from the gate electrode. A relatively large memory window of about 2.2 V was achieved by scanning the applied voltage of an Al/PMMA/C60/SiO2/Si structure between 4 and −4 V. Gold nanoparticle-based memory devices produced the best charge retention behaviour compared to the other MIS structures investigated.

• Journal Article Type: Article
• Acceptance Date: Sep 1, 2008
• Online Publication Date: Sep 26, 2008
• Publication Date: 2009-03
• Journal: Materials Science and Engineering: B
• Print ISSN: 0921-5107
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 159-160
• Pages: 14-17
• DOI: https://doi.org/10.1016/j.mseb.2008.09.003
• Keywords: Cold nanoparticles; C-60; Carbon nanotubes; PMMA; Memory devicesMETALLIC NANOPARTICLES; CARBON NANOTUBE; THIN-FILMS; FABRICATION; DEVICE; LAYERS; OXIDE
• Public URL: https://durham-repository.worktribe.com/output/1546350