Enhanced sensitivity of an organic field-effect transistor pH sensor using a fatty acid Langmuir-Blodgett film.

Ritjareonwattu, S; Yun, Y; Pearson, C; Petty, MC

Abstract

An ion-sensitive organic field-effect transistor (ISOFET) has been fabricated by using poly(3-hexylthiophene) as the semiconductor and polymethylmethacrylate as the gate insulator. With the gate metallization replaced by an Ag/AgCl reference electrode, and following suitable encapsulation, the ISOFETs exhibit transistor behavior in an aqueous environment. Moreover, the devices are shown to respond to changes in pH of the solution. A significant increase in the sensitivity of the ISOFET to H+ ions was found by depositing a Langmuir-Blodgett film of arachidic acid on top of the gate insulator. (C) 2010 Elsevier B.V. All rights reserved.

Citation

Ritjareonwattu, S., Yun, Y., Pearson, C., & Petty, M. (2010). Enhanced sensitivity of an organic field-effect transistor pH sensor using a fatty acid Langmuir-Blodgett film. Organic Electronics, 11(11), 1792-1795. https://doi.org/10.1016/j.orgel.2010.07.025

• Journal Article Type: Article
• Publication Date: 2010-11
• Deposit Date: Jan 6, 2011
• Journal: Organic Electronics
• Print ISSN: 1566-1199
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 11
• Issue: 11
• Pages: 1792-1795
• DOI: https://doi.org/10.1016/j.orgel.2010.07.025
• Public URL: https://durham-repository.worktribe.com/output/1544696