Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate.

Mahapatra, R.; Poolamai, N.; Chattopadhyay, S.; Wright, N.G.; Chakraborty, A.K.; Coleman, K.S.; Coleman, P.G.; Burrows, C.P.

Abstract

The structural and electrical characteristics of thermally oxidizedTi∕SiO2 gate dielectric stacks on 4H–SiC substrates have been investigated. X-ray photoelectron spectroscopy shows a good stoichiometry of TiO2films formed by thermal oxidation of evaporated Ti. No evidence of the formation of titanium silicide at the surface as well as in the interfacial layer was observed. Electrical measurements show, in particular, no signature of an increase in interface state density towards the conduction band edge of 4H–SiC. The improved leakage current with higher breakdown field of 11MV∕cm makes TiO2∕SiO2 stacks a potential gate insulator for high-power SiC devices.

Citation

Mahapatra, R., Poolamai, N., Chattopadhyay, S., Wright, N., Chakraborty, A., Coleman, K., …Burrows, C. (2006). Characterization of thermally oxidized Ti/SiO2 gate dielectric stacks on 4H-SiC substrate. Applied Physics Letters, 88(7), https://doi.org/10.1063/1.2173713

• Journal Article Type: Article
• Publication Date: 2006
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 88
• Issue: 7
• DOI: https://doi.org/10.1063/1.2173713
• Keywords: Dielectric thin films, Dielectrics, Wide bandgap semiconductors, Leakage currents, Electrical properties.
• Public URL: https://durham-repository.worktribe.com/output/1541756