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Dislocation sources and slip band nucleation from indents on silicon wafers

Wittge, J; Danilewsky, AN; Allen, D; McNally, P; Li, Z; Baumbach, T; Gorostegui-Colinas, E; Garagorri, J; Elizalde, MR; Jacques, D; Fossati, MC; Bowen, DK; Tanner, BK

Authors

J Wittge

AN Danilewsky

D Allen

P McNally

Z Li

T Baumbach

E Gorostegui-Colinas

J Garagorri

MR Elizalde

D Jacques

MC Fossati

DK Bowen



Citation

Wittge, J., Danilewsky, A., Allen, D., McNally, P., Li, Z., Baumbach, T., …Tanner, B. (2010). Dislocation sources and slip band nucleation from indents on silicon wafers. Journal of Applied Crystallography, 43(5), 1036-1039. https://doi.org/10.1107/s0021889810029894

Journal Article Type Article
Publication Date 2010-10
Deposit Date Jun 24, 2011
Journal Journal of Applied Crystallography
Print ISSN 0021-8898
Publisher International Union of Crystallography
Volume 43
Issue 5
Pages 1036-1039
DOI https://doi.org/10.1107/s0021889810029894
Keywords in situ observations; dislocations; slip bands; X-ray diffraction imaging; rapid thermal annealingRAY; TOPOGRAPHY
Public URL https://durham-repository.worktribe.com/output/1530794



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