Electronic memory device based on a single-layer fluorene-containing organic thin film.

Pearson, C.; Ahn, J.H.; Mabrook, M.F.; Zeze, D.A.; Petty, M.C.; Kamtekar, K.T.; Wang, C.S.; Bryce, M.R.; Dimitrakis, P.; Tsoukalas, D.

Abstract

The authors report on a simple bistable switching device based on a thin film of an electroactive polymer containing a fluorene group sandwiched between aluminumelectrodes. No additional materials (e.g., metallic or semiconductive nanoparticles) are required for the devices to operate. This improves considerably the scalability of the memory elements at nanometer dimensions. The device operation is thought to depend on charge trapping at fluorenone defects within the organic film.

Citation

Pearson, C., Ahn, J., Mabrook, M., Zeze, D., Petty, M., Kamtekar, K., …Tsoukalas, D. (2007). Electronic memory device based on a single-layer fluorene-containing organic thin film. Applied Physics Letters, 91(12), Article 123506. https://doi.org/10.1063/1.2783481

• Journal Article Type: Article
• Publication Date: 2007-09
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 91
• Issue: 12
• Article Number: 123506
• DOI: https://doi.org/10.1063/1.2783481