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Electronic memory device based on a single-layer fluorene-containing organic thin film.

Pearson, C.; Ahn, J.H.; Mabrook, M.F.; Zeze, D.A.; Petty, M.C.; Kamtekar, K.T.; Wang, C.S.; Bryce, M.R.; Dimitrakis, P.; Tsoukalas, D.

Authors

C. Pearson

J.H. Ahn

M.F. Mabrook

K.T. Kamtekar

C.S. Wang

M.R. Bryce

P. Dimitrakis

D. Tsoukalas



Abstract

The authors report on a simple bistable switching device based on a thin film of an electroactive polymer containing a fluorene group sandwiched between aluminumelectrodes. No additional materials (e.g., metallic or semiconductive nanoparticles) are required for the devices to operate. This improves considerably the scalability of the memory elements at nanometer dimensions. The device operation is thought to depend on charge trapping at fluorenone defects within the organic film.

Citation

Pearson, C., Ahn, J., Mabrook, M., Zeze, D., Petty, M., Kamtekar, K., …Tsoukalas, D. (2007). Electronic memory device based on a single-layer fluorene-containing organic thin film. Applied Physics Letters, 91(12), Article 123506. https://doi.org/10.1063/1.2783481

Journal Article Type Article
Publication Date 2007-09
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 91
Issue 12
Article Number 123506
DOI https://doi.org/10.1063/1.2783481
Public URL https://durham-repository.worktribe.com/output/1530631