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Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs

Groves, C; Chia, CK; Tozer, RC; David, JPR; Rees, GJ

Authors

CK Chia

RC Tozer

JPR David

GJ Rees



Citation

Groves, C., Chia, C., Tozer, R., David, J., & Rees, G. (2005). Avalanche noise characteristics of single AlxGa1-xAs(0.3 < x < 0.6)-GaAs heterojunction APDs. IEEE Journal of Quantum Electronics, 41(1), 70-75

Journal Article Type Article
Publication Date 2005-01
Journal IEEE Journal of Quantum Electronics
Print ISSN 0018-9197
Electronic ISSN 1558-1713
Publisher Institute of Electrical and Electronics Engineers
Volume 41
Issue 1
Pages 70-75
Keywords avalanche photodiodes (APDs); heterojunctions; impact ionization; noiseIMPACT IONIZATION COEFFICIENTS; ENGINEERED MULTIPLICATION REGION; INGAAS/INALAS SUPERLATTICE; EXCESS NOISE; DEAD SPACE; PHOTODIODES; ELECTRON; WELL; DIODES; HETEROSTRUCTURES
Public URL https://durham-repository.worktribe.com/output/1524651



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