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A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy

Mendis, BG; MacKenzie, M; Craven, AJ

Authors

M MacKenzie

AJ Craven



Citation

Mendis, B., MacKenzie, M., & Craven, A. (2010). A new analytical method for characterising the bonding environment at rough interfaces in high-k gate stacks using electron energy loss spectroscopy. Ultramicroscopy, 110(2), 105-117. https://doi.org/10.1016/j.ultramic.2009.09.013

Journal Article Type Article
Publication Date 2010
Journal Ultramicroscopy
Print ISSN 0304-3991
Electronic ISSN 1879-2723
Publisher Elsevier
Volume 110
Issue 2
Pages 105-117
DOI https://doi.org/10.1016/j.ultramic.2009.09.013
Public URL https://durham-repository.worktribe.com/output/1522167