On the identification of the oxygen vacancy in HfO(2)

Clark, S.J.; Lin, L.; Robertson, J.

Abstract

The single positively charge oxygen vacancy in HfO2 is found to undergo a symmetry breaking distortion to a C2v symmetry, driven by electron localization, which is consistent with the experimentally observed electron spin resonance signal. This completes the identity of the oxygen vacancy defect in HfO2 and ZrO2 as the active defect that affects reliability and gate threshold voltage instabilities in high K metal gate stacks.

Citation

Clark, S., Lin, L., & Robertson, J. (2011). On the identification of the oxygen vacancy in HfO(2). Microelectronic Engineering, 88(7), 1464-1466. https://doi.org/10.1016/j.mee.2011.03.078

• Journal Article Type: Article
• Publication Date: 2011-07
• Deposit Date: Jan 31, 2012
• Journal: Microelectronic Engineering
• Print ISSN: 0167-9317
• Publisher: Elsevier
• Peer Reviewed: Peer Reviewed
• Volume: 88
• Issue: 7
• Pages: 1464-1466
• DOI: https://doi.org/10.1016/j.mee.2011.03.078