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On the identification of the oxygen vacancy in HfO(2)

Clark, S.J.; Lin, L.; Robertson, J.


L. Lin

J. Robertson


The single positively charge oxygen vacancy in HfO2 is found to undergo a symmetry breaking distortion to a C2v symmetry, driven by electron localization, which is consistent with the experimentally observed electron spin resonance signal. This completes the identity of the oxygen vacancy defect in HfO2 and ZrO2 as the active defect that affects reliability and gate threshold voltage instabilities in high K metal gate stacks.


Clark, S., Lin, L., & Robertson, J. (2011). On the identification of the oxygen vacancy in HfO(2). Microelectronic Engineering, 88(7), 1464-1466.

Journal Article Type Article
Publication Date 2011-07
Deposit Date Jan 31, 2012
Journal Microelectronic Engineering
Print ISSN 0167-9317
Publisher Elsevier
Peer Reviewed Peer Reviewed
Volume 88
Issue 7
Pages 1464-1466