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Limits to doping in oxides

Robertson, J.; Clark, S.J.

Limits to doping in oxides Thumbnail


J. Robertson


The chemical trends of limits to doping of many semiconducting metal oxides is analyzed in terms of the formation energies needed to form the compensating defects. The n-type oxides are found to have high electron affinities and charge neutrality levels that lie in midgap or the upper part of their gap, whereas p-type oxides have small photoionization potentials and charge neutrality levels lying in the lower gap. The doping-limit energy range is found to vary with the bulk free energy of the compound.


Robertson, J., & Clark, S. (2011). Limits to doping in oxides. Physical review B, 83(7), Article 075205.

Journal Article Type Article
Publication Date Feb 1, 2011
Deposit Date Jan 31, 2012
Publicly Available Date Nov 27, 2012
Journal Physical review B: Condensed matter and materials physics
Print ISSN 1098-0121
Electronic ISSN 1550-235X
Publisher American Physical Society
Peer Reviewed Peer Reviewed
Volume 83
Issue 7
Article Number 075205


Published Journal Article (371 Kb)

Copyright Statement
© 2011 The American Physical Society

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