Oxygen vacancy levels and electron transport in Al(2)O(3)

Liu, D.; Clark, S.J.; Robertson, J.

Abstract

The energy levels of the oxygen vacancy in α- and θ-Al2O3 were calculated using the screened exchange hybrid functional, and explain the electron hopping and trapping levels seen in deposited Al2O3 at ∼ 1.8 eV below its conduction band edge. The vacancy supports five accessible charge states, from 2+ to 2−. Electron hopping corresponds to the 0/− level, which lies 1.8 eV below the conduction band edge in θ-Al2O3. This level lies much deeper than it does HfO2. The +/0 level lies at 2.8 eV above oxide valence band in θ-Al2O3 and thus below the Si valence band top.

Citation

Liu, D., Clark, S., & Robertson, J. (2010). Oxygen vacancy levels and electron transport in Al(2)O(3). Applied Physics Letters, 96(3), Article 032905. https://doi.org/10.1063/1.3293440

• Journal Article Type: Article
• Publication Date: Jan 18, 2010
• Deposit Date: Jan 31, 2012
• Publicly Available Date: Oct 9, 2012
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 96
• Issue: 3
• Article Number: 032905
• DOI: https://doi.org/10.1063/1.3293440
• Keywords: Aluminium compounds, Conduction bands, Hopping conduction, Vacancies (crystal), Valence bands.
• Public URL: https://durham-repository.worktribe.com/output/1509961