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Oxygen vacancy levels and electron transport in Al(2)O(3)

Liu, D.; Clark, S.J.; Robertson, J.

Oxygen vacancy levels and electron transport in Al(2)O(3) Thumbnail


D. Liu

J. Robertson


The energy levels of the oxygen vacancy in α- and θ-Al2O3 were calculated using the screened exchange hybrid functional, and explain the electron hopping and trapping levels seen in deposited Al2O3 at ∼ 1.8 eV below its conduction band edge. The vacancy supports five accessible charge states, from 2+ to 2−. Electron hopping corresponds to the 0/− level, which lies 1.8 eV below the conduction band edge in θ-Al2O3. This level lies much deeper than it does HfO2. The +/0 level lies at 2.8 eV above oxide valence band in θ-Al2O3 and thus below the Si valence band top.


Liu, D., Clark, S., & Robertson, J. (2010). Oxygen vacancy levels and electron transport in Al(2)O(3). Applied Physics Letters, 96(3), Article 032905.

Journal Article Type Article
Publication Date Jan 18, 2010
Deposit Date Jan 31, 2012
Publicly Available Date Oct 9, 2012
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 96
Issue 3
Article Number 032905
Keywords Aluminium compounds, Conduction bands, Hopping conduction, Vacancies (crystal), Valence bands.


Published Journal Article (154 Kb)

Copyright Statement
© 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Liu, D. and Clark, S.J. and Robertson, J. (2010) 'Oxygen vacancy levels and electron transport in Al(2)O(3).', Applied physics letters., 96 (3), 032905 and may be found at

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