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Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman, A.; Rosamond, M.C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A.J.; Mabrook, M.F.; Zeze, D.A.

Authors

A. Sleiman

M.C. Rosamond

M. Alba Martin

A. Ayesh

A. Al Ghaferi

M.F. Mabrook



Citation

Sleiman, A., Rosamond, M., Alba Martin, M., Ayesh, A., Al Ghaferi, A., Gallant, A., …Zeze, D. (2012). Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters, 100(2), Article 023302. https://doi.org/10.1063/1.3675856

Journal Article Type Article
Publication Date 2012
Deposit Date Apr 27, 2012
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Volume 100
Issue 2
Article Number 023302
DOI https://doi.org/10.1063/1.3675856
Public URL https://durham-repository.worktribe.com/output/1499729



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