Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate

Sleiman, A.; Rosamond, M.C.; Alba Martin, M.; Ayesh, A.; Al Ghaferi, A.; Gallant, A.J.; Mabrook, M.F.; Zeze, D.A.

Abstract

A pentacene-based organic metal-insulator-semiconductor memory device, utilizing single walled carbon nanotubes (SWCNTs) for charge storage is reported. SWCNTs were embedded, between SU8 and polymethylmethacrylate to achieve an efficient encapsulation. The devices exhibit capacitance-voltage clockwise hysteresis with a 6 V memory window at ± 30 V sweep voltage, attributed to charging and discharging of SWCNTs. As the applied gate voltage exceeds the SU8 breakdown voltage, charge leakage is induced in SU8 to allow more charges to be stored in the SWCNT nodes. The devices exhibited high storage density (∼9.15 × 1011 cm−2) and demonstrated 94% charge retention due to the superior encapsulation.

Citation

Sleiman, A., Rosamond, M., Alba Martin, M., Ayesh, A., Al Ghaferi, A., Gallant, A., Mabrook, M., & Zeze, D. (2012). Pentacene-based metal-insulator-semiconductor memory structures utilizing single walled carbon nanotubes as a nanofloating gate. Applied Physics Letters, 100(2), Article 023302. https://doi.org/10.1063/1.3675856

• Journal Article Type: Article
• Publication Date: Jan 9, 2012
• Deposit Date: Apr 27, 2012
• Publicly Available Date: Sep 13, 2012
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 100
• Issue: 2
• Article Number: 023302
• DOI: https://doi.org/10.1063/1.3675856
• Public URL: https://durham-repository.worktribe.com/output/1499729