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Defect states in the high-dielectric-constant gate oxide LaAlO3

Xiong, K.; Robertson, J.; Clark, S.J.

Defect states in the high-dielectric-constant gate oxide LaAlO3 Thumbnail


K. Xiong

J. Robertson


We present calculations of the energy levels of the oxygen vacancy,AlLa antisite, and oxygen interstitial defects in LaAlO3 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level near the LaAlO3conduction band and above the Si gap. It is identified as the main electron trap and the cause of instability. The AlLa antisite gives a state near midgap, neutral when empty, which would be an important trap, with no counterpart in HfO2.


Xiong, K., Robertson, J., & Clark, S. (2006). Defect states in the high-dielectric-constant gate oxide LaAlO3. Applied Physics Letters, 89(2), Article 022907.

Journal Article Type Article
Acceptance Date May 25, 2006
Publication Date Jul 10, 2006
Deposit Date Jan 31, 2012
Publicly Available Date Aug 18, 2015
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 89
Issue 2
Article Number 022907


Published Journal Article (591 Kb)

Copyright Statement
© 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 89, 022907 (2006) and may be found at

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