HC Hsueh
Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment
Hsueh, HC; Warren, MC; Vass, H; Ackland, GJ; Clark, SJ; Crain, J
Authors
Citation
Hsueh, H., Warren, M., Vass, H., Ackland, G., Clark, S., & Crain, J. (1996). Vibrational properties of the layered semiconductor germanium sulfide under hydrostatic pressure: Theory and experiment. Physical review B, 53(22), 14806-14817. https://doi.org/10.1103/physrevb.53.14806
| Journal Article Type | Article |
|---|---|
| Publication Date | 1996 |
| Deposit Date | Jan 31, 2012 |
| Journal | Physical Review B |
| Print ISSN | 1098-0121 |
| Publisher | American Physical Society |
| Volume | 53 |
| Issue | 22 |
| Pages | 14806-14817 |
| DOI | https://doi.org/10.1103/physrevb.53.14806 |
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