HC Hsueh
HIGH-PRESSURE EFFECTS IN THE LAYERED SEMICONDUCTOR GERMANIUM SELENIDE
Hsueh, HC; Vass, H; Clark, SJ; Ackland, GJ; Crain, J
Citation
Hsueh, H., Vass, H., Clark, S., Ackland, G., & Crain, J. (1995). HIGH-PRESSURE EFFECTS IN THE LAYERED SEMICONDUCTOR GERMANIUM SELENIDE. Physical review B, 51(23), 16750-16760. https://doi.org/10.1103/physrevb.51.16750
| Journal Article Type | Article |
|---|---|
| Publication Date | 1995 |
| Deposit Date | Jan 31, 2012 |
| Journal | Physical review B - Condensed Matter and Materials Physics |
| Print ISSN | 1098-0121 |
| Electronic ISSN | 1550-235X |
| Publisher | American Physical Society |
| Volume | 51 |
| Issue | 23 |
| Pages | 16750-16760 |
| DOI | https://doi.org/10.1103/physrevb.51.16750 |
| Public URL | https://durham-repository.worktribe.com/output/1486400 |
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