Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films

Wang, M.; Rushforth, A.W.; Hindmarch, A.T.; Campion, R.P.; Edmonds, K.W.; Staddon, C.R.; Foxon, C.T.; Gallagher, B.L.

Abstract

We investigate the dependence of the magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films on the stoichiometry of the interface region. For films incorporating a thin As-deficient layer at the interface, the out-diffusion of interstitial Mn from the bottom layer is strongly suppressed, resulting in a large difference in T C and magnetic anisotropy between the two layers. X-ray reflectivity measurements show that the suppression of interstitial diffusion is correlated with an increased interface roughness. When the As-deficient interface layer is thicker than 2.5 nm, the in-plane uniaxial magnetic easy axis rotates from the [1-10] to the [110] crystalline axis.

Citation

Wang, M., Rushforth, A., Hindmarch, A., Campion, R., Edmonds, K., Staddon, C., …Gallagher, B. (2013). Magnetic and structural properties of (Ga,Mn)As/(Al,Ga,Mn)As bilayer films. Applied Physics Letters, 102(11), Article 112404. https://doi.org/10.1063/1.4795444

• Journal Article Type: Article
• Publication Date: Mar 18, 2013
• Deposit Date: Mar 19, 2013
• Publicly Available Date: Jul 8, 2014
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 102
• Issue: 11
• Article Number: 112404
• DOI: https://doi.org/10.1063/1.4795444
• Keywords: Annealing, Interstitial defects, Semiconductor growth, Etching, Magnetic anisotropy.
• Public URL: https://durham-repository.worktribe.com/output/1466197