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Electron spin resonance signature of the oxygen vacancy in HfO2

Gillen, R.; Robertson, J.; Clark, S.J.

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Authors

R. Gillen

J. Robertson



Abstract

The oxygen vacancy has been inferred to be the critical defect in HfO2, responsible for charge trapping, gate threshold voltage instability, and Fermi level pinning for high work function gates, but it has never been conclusively identified. Here, the electron spin resonance g tensor parameters of the oxygen vacancy are calculated, using methods that do not over-estimate the delocalization of the defect wave function, to be gxx = 1.918, gyy = 1.926, gzz = 1.944, and are consistent with an observed spectrum. The defect undergoes a symmetry lowering polaron distortion to be localized mainly on a single adjacent Hf ion.

Citation

Gillen, R., Robertson, J., & Clark, S. (2012). Electron spin resonance signature of the oxygen vacancy in HfO2. Applied Physics Letters, 101(10), Article 102904. https://doi.org/10.1063/1.4751110

Journal Article Type Article
Acceptance Date Aug 23, 2012
Publication Date Sep 3, 2012
Deposit Date Jun 3, 2014
Publicly Available Date Aug 18, 2015
Journal Applied Physics Letters
Print ISSN 0003-6951
Electronic ISSN 1077-3118
Publisher American Institute of Physics
Peer Reviewed Peer Reviewed
Volume 101
Issue 10
Article Number 102904
DOI https://doi.org/10.1063/1.4751110

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Copyright Statement
© 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 101, 102904 (2012) and may be found at http://dx.doi.org/10.1063/1.4751110





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