UV-assisted low temperature oxide dielectric films for TFT applications

Hwang, J; Lee, K; Jeong, J; Lee, YU; Pearson, C; Petty, MC; Kim, H

Abstract

Solution-based oxide gate dielectric layers are prepared from metal nitrates using UV-assisted annealing at 150 °C. The leakage current densities of ZrO2 and Al2O3 dielectrics are less than about 10-9 A/cm2 at 1 MV/cm and comparable to those formed by annealing at higher temperatures. High dielectric constants and the low leakage current behavior of the dielectric layers provide excellent ZnO TFT performance, with a field effect mobility of 1.37 cm2/V.s and an off-current density of 10-12 A/cm2. This low fabrication temperature process is compatible with future plastic electronics technology.

Citation

Hwang, J., Lee, K., Jeong, J., Lee, Y., Pearson, C., Petty, M., & Kim, H. (2014). UV-assisted low temperature oxide dielectric films for TFT applications. Advanced Materials Interfaces, 1(8), Article 1400206. https://doi.org/10.1002/admi.201400206

• Journal Article Type: Article
• Publication Date: Nov 1, 2014
• Deposit Date: Oct 10, 2014
• Publicly Available Date: Oct 13, 2014
• Journal: Advanced Materials Interfaces
• Electronic ISSN: 2196-7350
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 1
• Issue: 8
• Article Number: 1400206
• DOI: https://doi.org/10.1002/admi.201400206
• Keywords: UV-assisted annealing, Gate insulator, Oxide dielectrics, Metal nitrate, ZnO TFT.
• Public URL: https://durham-repository.worktribe.com/output/1452651