Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis

Jeong, Y.; Pearson, C.; Lee, Y.U.; Winchester, L.; Hwang, J.; Kim, H.; Do, L.-M.; Petty, M.C.

Abstract

We report the electrical behavior of undoped zinc oxide thin-film transistors (TFTs) fabricated by low-temperature chemical spray pyrolysis. An aerosol system utilizing aerodynamic focusing was used to deposit the ZnO. Polycrystalline films were subsequently formed by annealing at the relatively low temperature of 140°C. The saturation mobility of the TFTs was 2 cm2/Vs, which is the highest reported for undoped ZnO TFTs manufactured below 150°C. The devices also had an on/off ratio of 104 and a threshold voltage of −3.5 V. These values were found to depend reversibly on measurement conditions.

Citation

Jeong, Y., Pearson, C., Lee, Y., Winchester, L., Hwang, J., Kim, H., …Petty, M. (2014). Zinc oxide thin-film transistors fabricated at low temperature by chemical spray pyrolysis. Journal of Electronic Materials, 43(11), 4241-4245. https://doi.org/10.1007/s11664-014-3342-8

• Journal Article Type: Article
• Publication Date: Nov 1, 2014
• Deposit Date: Oct 9, 2014
• Publicly Available Date: Oct 9, 2014
• Journal: Journal of Electronic Materials
• Print ISSN: 0361-5235
• Electronic ISSN: 1543-186X
• Publisher: Springer
• Peer Reviewed: Peer Reviewed
• Volume: 43
• Issue: 11
• Pages: 4241-4245
• DOI: https://doi.org/10.1007/s11664-014-3342-8
• Keywords: Zinc oxide transistors, Chemical spray pyrolysis, Effect of measurement conditions.
• Public URL: https://durham-repository.worktribe.com/output/1422237