Control of domain wall pinning by localised focused Ga  + ion irradiation on Au capped NiFe nanowires

Burn, D.M.; Atkinson, D.

Abstract

Understanding domain wall pinning and propagation in nanowires are important for future spintronics and nanoparticle manipulation technologies. Here, the effects of microscopic local modification of the magnetic properties, induced by focused-ion-beam intermixing, in NiFe/Au bilayer nanowires on the pinning behavior of domain walls was investigated. The effects of irradiation dose and the length of the irradiated features were investigated experimentally. The results are considered in the context of detailed quasi-static micromagnetic simulations, where the ion-induced modification was represented as a local reduction of the saturation magnetization. Simulations show that domain wall pinning behavior depends on the magnitude of the magnetization change, the length of the modified region, and the domain wall structure. Comparative analysis indicates that reduced saturation magnetisation is not solely responsible for the experimentally observed pinning behavior.

Citation

Burn, D., & Atkinson, D. (2014). Control of domain wall pinning by localised focused Ga  + ion irradiation on Au capped NiFe nanowires. Journal of Applied Physics, 116(20), Article 163901. https://doi.org/10.1063/1.4900437

• Journal Article Type: Article
• Acceptance Date: Oct 14, 2014
• Online Publication Date: Oct 22, 2014
• Publication Date: Oct 22, 2014
• Deposit Date: Jan 25, 2016
• Publicly Available Date: Jun 26, 2018
• Journal: Journal of Applied Physics
• Print ISSN: 0021-8979
• Electronic ISSN: 1089-7550
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 116
• Issue: 20
• Article Number: 163901
• DOI: https://doi.org/10.1063/1.4900437
• Public URL: https://durham-repository.worktribe.com/output/1414460