Long lifetime hole traps at grain boundaries in CdTe thin-film photovoltaics

Mendis, B.G.; Gachet, D.; Major, J.D.; Durose, K.

Abstract

A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100  ps ) within the grains and are rapidly quenched at the grain boundary. However, a ∼47  meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

Citation

Mendis, B., Gachet, D., Major, J., & Durose, K. (2015). Long lifetime hole traps at grain boundaries in CdTe thin-film photovoltaics. Physical Review Letters, 115(21), Article 218701. https://doi.org/10.1103/physrevlett.115.218701

• Journal Article Type: Article
• Acceptance Date: Jun 25, 2015
• Online Publication Date: Nov 18, 2015
• Publication Date: Nov 18, 2015
• Deposit Date: Nov 24, 2015
• Publicly Available Date: Nov 26, 2015
• Journal: Physical Review Letters
• Print ISSN: 0031-9007
• Electronic ISSN: 1079-7114
• Publisher: American Physical Society
• Peer Reviewed: Peer Reviewed
• Volume: 115
• Issue: 21
• Article Number: 218701
• DOI: https://doi.org/10.1103/physrevlett.115.218701
• Public URL: https://durham-repository.worktribe.com/output/1397580