Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

Jeong, Y.; Pearson, C.; Kim, H-G.; Park, M-Y.; Kim, H.; Do, L-M.; Petty, M.C.

Abstract

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10−7 A/cm2) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm2/(V s), an on/off ratio of ∼107, a threshold voltage of −1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm2/(V s) and on/off ratio of ∼107.

Citation

Jeong, Y., Pearson, C., Kim, H., Park, M., Kim, H., Do, L., & Petty, M. (2016). Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors. ACS Applied Materials and Interfaces, 8(3), 2061-2070. https://doi.org/10.1021/acsami.5b10520

• Journal Article Type: Article
• Acceptance Date: Dec 24, 2015
• Online Publication Date: Dec 24, 2015
• Publication Date: Jan 27, 2016
• Deposit Date: Jan 15, 2016
• Publicly Available Date: Dec 24, 2016
• Journal: ACS Applied Materials and Interfaces
• Print ISSN: 1944-8244
• Electronic ISSN: 1944-8252
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 8
• Issue: 3
• Pages: 2061-2070
• DOI: https://doi.org/10.1021/acsami.5b10520
• Keywords: Solution process, Low temperature, Solution-processed silicon dioxide, Zinc oxide, Zinc oxide field-effect transistor, Oxygen plasma.
• Public URL: https://durham-repository.worktribe.com/output/1391479