A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure

Liu, Heng-Jui; Lin, Jheng-Cyuan; Fang, Yue-Wen; Wang, Jing-Ching; Huang, Bo-Chao; Gao, Xiang; Huang, Rong; Dean, Philip R.; Hatton, Peter D.; Chin, Yi-Ying; Lin, Hong-Ji; Chen, Chien-Te; Ikuhara, Yuichi; Chiu, Ya-Ping; Chang, Chia-Seng; Duan, Chun-Gang; He, Qing; Chu, Ying-Hao

Abstract

A novel artificially created MnO2 monolayer system is demonstrated in atomically controlled epitaxial perovskite heterostructures. With careful design of different electrostatic boundary conditions, a magnetic transition as well as a metal–insulator transition of the MnO2 monolayer is unveiled, providing a fundamental understanding of dimensionality‐confined strongly correlated electron systems and a direction to design new electronic devices.

Citation

Liu, H., Lin, J., Fang, Y., Wang, J., Huang, B., Gao, X., …Chu, Y. (2016). A Metal-Insulator Transition of the Buried MnO2 Monolayer in Complex Oxide Heterostructure. Advanced Materials, 28(41), 9142-9151. https://doi.org/10.1002/adma.201602281

• Journal Article Type: Article
• Acceptance Date: Apr 29, 2016
• Online Publication Date: Aug 29, 2016
• Publication Date: 2016-11
• Deposit Date: Dec 5, 2016
• Journal: Advanced Materials
• Print ISSN: 0935-9648
• Publisher: Wiley
• Peer Reviewed: Peer Reviewed
• Volume: 28
• Issue: 41
• Pages: 9142-9151
• DOI: https://doi.org/10.1002/adma.201602281
• Public URL: https://durham-repository.worktribe.com/output/1390936