Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films

Huang, Tongtong; Wang, Yujia; Li, Haobo; Wang, Meng; Lyu, Yingjie; Shen, Shengchun; Lu, Nianpeng; He, Qing; Yu, Pu

Abstract

Strain engineering of transition metal oxides due to their desirable properties has long been a focal point in both physics and material sciences. Here, we investigate the strain dependence of electronic and optical properties of the high valence iron-based perovskite CaFeO3d. Using substrates with various lattice constants, we achieve a wide range of tunable epitaxial strain states in CaFeO3d thin films ranging from compressive 0.37% to tensile 3.58%. Electrical transport and optical absorption measurements demonstrate a distinct strain-dependent behavior, in which larger tensile strain leads to higher electrical resistivity and a larger optical bandgap. We attribute these modulations to tensile strain suppressed p-d hybridization in CaFeO3d, as evidenced by soft X-ray absorption spectra measurements.

Citation

Huang, T., Wang, Y., Li, H., Wang, M., Lyu, Y., Shen, S., Lu, N., He, Q., & Yu, P. (2019). Tuning the electronic properties of epitaxial strained CaFeO3−δ thin films. Applied Physics Letters, 114(22), Article 221907. https://doi.org/10.1063/1.5098025

• Journal Article Type: Article
• Acceptance Date: May 15, 2019
• Online Publication Date: Jun 7, 2019
• Publication Date: Jun 7, 2019
• Deposit Date: Jun 26, 2019
• Publicly Available Date: Jun 7, 2020
• Journal: Applied Physics Letters
• Print ISSN: 0003-6951
• Electronic ISSN: 1077-3118
• Publisher: American Institute of Physics
• Peer Reviewed: Peer Reviewed
• Volume: 114
• Issue: 22
• Article Number: 221907
• DOI: https://doi.org/10.1063/1.5098025
• Public URL: https://durham-repository.worktribe.com/output/1298502