Laser-writable high-k dielectric for van der Waals nanoelectronics

Peimyoo, N.; Barnes, M.D.; Mehew, J.D.; De Sanctis, A.; Amit, I.; Escolar, J.; Anastasiou, K.; Rooney, A.P.; Haigh, S.J.; Russo, S.; Craciun, M.F.; Withers, F.

Abstract

Similar to silicon-based semiconductor devices, van der Waals heterostructures require integration with high-k oxides. Here, we demonstrate a method to embed and pattern a multifunctional few-nanometer-thick high-k oxide within various van der Waals devices without degrading the properties of the neighboring two-dimensional materials. This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. Furthermore, upon dielectric breakdown, electrically conductive filaments are formed. This filamentation process can be used to electrically contact encapsulated conductive materials. Careful control of the filamentation process also allows for reversible switching memories. This nondestructive embedding of a high-k oxide within complex van der Waals heterostructures could play an important role in future flexible multifunctional van der Waals devices.

Citation

Peimyoo, N., Barnes, M., Mehew, J., De Sanctis, A., Amit, I., Escolar, J., …Withers, F. (2019). Laser-writable high-k dielectric for van der Waals nanoelectronics. Science Advances, 5(1), https://doi.org/10.1126/sciadv.aau0906

• Journal Article Type: Article
• Acceptance Date: Dec 7, 2018
• Online Publication Date: Jan 18, 2019
• Publication Date: Jan 18, 2019
• Deposit Date: Jan 21, 2019
• Publicly Available Date: Jan 22, 2019
• Journal: Science Advances
• Publisher: American Association for the Advancement of Science
• Peer Reviewed: Peer Reviewed
• Volume: 5
• Issue: 1
• DOI: https://doi.org/10.1126/sciadv.aau0906
• Public URL: https://durham-repository.worktribe.com/output/1339403