Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen-Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C.; Anthopoulos, Thomas D.; Bradley, Donal D.C.

Abstract

We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10–2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Citation

Chaudhry, M. U., Tetzner, K., Lin, Y.-H., Nam, S., Pearson, C., Groves, C., Petty, M. C., Anthopoulos, T. D., & Bradley, D. D. (2018). Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors. ACS Applied Materials and Interfaces, 10(22), 18445-18449. https://doi.org/10.1021/acsami.8b06031

• Journal Article Type: Article
• Acceptance Date: May 16, 2018
• Online Publication Date: May 16, 2018
• Publication Date: Jun 6, 2018
• Deposit Date: May 23, 2018
• Publicly Available Date: May 23, 2018
• Journal: ACS Applied Materials and Interfaces
• Print ISSN: 1944-8244
• Electronic ISSN: 1944-8252
• Publisher: American Chemical Society
• Peer Reviewed: Peer Reviewed
• Volume: 10
• Issue: 22
• Pages: 18445-18449
• DOI: https://doi.org/10.1021/acsami.8b06031
• Public URL: https://durham-repository.worktribe.com/output/1330397