Adolfo De Sanctis
Strain-engineered inverse charge-funnelling in layered semiconductors
De Sanctis, Adolfo; Amit, Iddo; Hepplestone, Steven P; Craciun, Monica F; Russo, Saverio
Authors
Dr Iddo Amit iddo.amit@durham.ac.uk
Assistant Professor
Steven P Hepplestone
Monica F Craciun
Saverio Russo
Abstract
The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications. Conversely, the ability to grow clean interfaces between materials has been a stepping stone for engineering built-in electric fields largely exploited in modern photovoltaics and opto-electronics. The emergence of atomically thin semiconductors is now enabling new ways to attain electric fields and unveil novel charge transport mechanisms. Here, we report the first direct electrical observation of the inverse charge-funnel effect enabled by deterministic and spatially resolved strain-induced electric fields in a thin sheet of HfS2. We demonstrate that charges driven by these spatially varying electric fields in the channel of a phototransistor lead to a 350% enhancement in the responsivity. These findings could enable the informed design of highly efficient photovoltaic cells.
Citation
De Sanctis, A., Amit, I., Hepplestone, S. P., Craciun, M. F., & Russo, S. (2018). Strain-engineered inverse charge-funnelling in layered semiconductors. Nature Communications, 9, Article 1652. https://doi.org/10.1038/s41467-018-04099-7
Journal Article Type | Article |
---|---|
Acceptance Date | Apr 4, 2018 |
Online Publication Date | Apr 25, 2018 |
Publication Date | Apr 25, 2018 |
Deposit Date | Jul 5, 2018 |
Publicly Available Date | Jul 6, 2018 |
Journal | Nature Communications |
Electronic ISSN | 2041-1723 |
Publisher | Nature Research |
Peer Reviewed | Peer Reviewed |
Volume | 9 |
Article Number | 1652 |
DOI | https://doi.org/10.1038/s41467-018-04099-7 |
Public URL | https://durham-repository.worktribe.com/output/1326881 |
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This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
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