Potential barrier height at the grain boundaries of a poly-silicon nanowire

Shamir, Assaf; Amit, Iddo; Englander, Danny; Horvitz, Dror; Rosenwaks, Yossi

Abstract

We present measurements of the potential barrier height and its dependence on grain size in poly-silicon nanowire (P-SiNW) arrays. Measurements conducted using Kelvin probe force microscopy coupled with electrostatic simulations, enabled us also to extract the density of the grain boundary interface states and their energy distribution. In addition it was shown that the barrier height scales with the grain size as the square of the grain radius.

Citation

Shamir, A., Amit, I., Englander, D., Horvitz, D., & Rosenwaks, Y. (2015). Potential barrier height at the grain boundaries of a poly-silicon nanowire. Nanotechnology, 26(35), Article 355201. https://doi.org/10.1088/0957-4484/26/35/355201

• Journal Article Type: Article
• Acceptance Date: Jul 13, 2015
• Online Publication Date: Aug 6, 2015
• Publication Date: Sep 4, 2015
• Deposit Date: Jul 5, 2018
• Publicly Available Date: Jul 31, 2018
• Journal: Nanotechnology
• Print ISSN: 0957-4484
• Electronic ISSN: 1361-6528
• Publisher: IOP Publishing
• Peer Reviewed: Peer Reviewed
• Volume: 26
• Issue: 35
• Article Number: 355201
• DOI: https://doi.org/10.1088/0957-4484/26/35/355201
• Public URL: https://durham-repository.worktribe.com/output/1322264