Effect off Post Oxide Annealing on the electrical and Interface 4-H SiC/Al2O3 MOS Capacitors

Idris, M.I.; Wright, N.G.; Horsfall, A.B.

Abstract

This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and I-V measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.

Citation

Idris, M., Wright, N., & Horsfall, A. (2018). Effect off Post Oxide Annealing on the electrical and Interface 4-H SiC/Al2O3 MOS Capacitors. Materials Science Forum, 924, 486-489. https://doi.org/10.4028/www.scientific.net/msf.924.486

• Journal Article Type: Article
• Acceptance Date: Feb 6, 2018
• Online Publication Date: Jun 5, 2018
• Publication Date: 2018-06
• Deposit Date: Oct 1, 2018
• Journal: Materials Science Forum
• Print ISSN: 0255-5476
• Electronic ISSN: 1662-9752
• Publisher: Trans Tech Publications
• Peer Reviewed: Peer Reviewed
• Volume: 924
• Pages: 486-489
• DOI: https://doi.org/10.4028/www.scientific.net/msf.924.486
• Public URL: https://durham-repository.worktribe.com/output/1317838