First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

Weng, M.H.; Idris, M.I.; Wright, S.; Clark, D.T.; Young, R.A.R.; McIntosh, J.R.; Gordon, D.L.; Horsfall, A.B.

Abstract

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Citation

Weng, M., Idris, M., Wright, S., Clark, D., Young, R., McIntosh, J., …Horsfall, A. (2018). First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application. Materials Science Forum, 924, 854-857. https://doi.org/10.4028/www.scientific.net/msf.924.854

• Journal Article Type: Article
• Acceptance Date: Nov 7, 2017
• Online Publication Date: Jun 5, 2018
• Publication Date: 2018-06
• Deposit Date: Oct 1, 2018
• Journal: Materials Science Forum
• Print ISSN: 0255-5476
• Electronic ISSN: 1662-9752
• Publisher: Trans Tech Publications
• Peer Reviewed: Peer Reviewed
• Volume: 924
• Pages: 854-857
• DOI: https://doi.org/10.4028/www.scientific.net/msf.924.854
• Public URL: https://durham-repository.worktribe.com/output/1313188