Outputs (22)

From the Laboratory to Application - Engineering the Solid State MASER (2025)
Presentation / Conference Contribution
Farrar, P., Davies, G., Mallick, K., Mangan, B., Walker, S., Deshpande, P., Hanson, J., & Horsfall, A. (2025, April). From the Laboratory to Application - Engineering the Solid State MASER. Presented at ARMMS 2025, Oxford

Interest in sovereign position navigation and timing (PNT) systems has increased significantly recently
and the ability to demonstrate high precision, low drift RF signals in a low power, compact footprint
is a key enabling technology. The developm... Read More about From the Laboratory to Application - Engineering the Solid State MASER.

Phase control of multi-RF photon spectroscopy of spin centers in SiC (2025)
Journal Article
Mallick, K., Bonato, C., & Horsfall, A. (2025). Phase control of multi-RF photon spectroscopy of spin centers in SiC. Applied Physics Letters, 127(4), Article 044003. https://doi.org/10.1063/5.0270164

The spin manipulation of Silicon Vacancy centers (V−Si) in SiC via Radio Frequency (RF) excitation offer a promising approach to realizing room temperature Quantum sensors. Conventional excitation schemes with a single RF antenna have limited control... Read More about Phase control of multi-RF photon spectroscopy of spin centers in SiC.

Dual polarity multi-level boost DC-DC converter (2024)
Presentation / Conference Contribution
Blackhorse-Hull, D., Mohanan-Leela, P., Alsafrani, A., Sarma, N., Crabtree, C., & Horsfall, A. (2024, June). Dual polarity multi-level boost DC-DC converter. Presented at 13th International Conference on Power Electronics, Machines and Drives (PEMD 2024), Nottingham, UK

Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing (2022)
Journal Article
Idris, M. I., & Horsfall, A. (2022). Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing. Crystals, 12(8), Article 1111. https://doi.org/10.3390/cryst12081111

Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/d... Read More about Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing.

Single event burnout sensitivity of SiC and Si (2022)
Journal Article
Littlefair, M. T. M., Simdyankin, S., Turvey, S., Groves, C., & Horsfall, A. B. (2022). Single event burnout sensitivity of SiC and Si. Semiconductor Science and Technology, 37(6), Article 065013. https://doi.org/10.1088/1361-6641/ac668c

Exposure to ionizing radiation has the potential to catastrophically modify the operation, and destroy, electronic components in microseconds. The electrification of aircraft necessitates the need to use the most power dense and lowest loss semicondu... Read More about Single event burnout sensitivity of SiC and Si.

3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric (2021)
Journal Article
Idris, M. I., & Horsfall, A. B. (2021). 3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric. Materials Science in Semiconductor Processing, 128, https://doi.org/10.1016/j.mssp.2021.105727

This paper reports on the first investigation of the characteristics of 3D structures formed in silicon carbide for the realisation of ultra-high performance nanoscale transistors, based on the FINFET topology. Capacitance–voltage characteristics sho... Read More about 3D structures for silicon carbide transistors utilising Al2O3 as a gate dielectric.

Modelling the Key Material Properties of Germanium for Device Simulation in Cryogenic Environments (2020)
Journal Article
Bradley, L., Horsfall, A., & Dyson, A. (2020). Modelling the Key Material Properties of Germanium for Device Simulation in Cryogenic Environments. IEEE Transactions on Electron Devices, 67(10), 4099-4104. https://doi.org/10.1109/ted.2020.3018097

Germanium is commonly suggested as an alternative for power electronic devices in emerging liquid hydrogen applications. Despite the clear benefits of a twofold conductivity increase and fabrication familiarity within the community, very few models e... Read More about Modelling the Key Material Properties of Germanium for Device Simulation in Cryogenic Environments.

First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface (2019)
Journal Article
Alsnani, H., Goss, J., Briddon, P., Rayson, M., & Horsfall, A. (2019). First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface. physica status solidi (a) – applications and materials science, 216(17), Article 1900328. https://doi.org/10.1002/pssa.201900328

We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC interface using density functional theory. We find that migration is hindered in the immediate vicinity of the interface, with the energy barrier for diffu... Read More about First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface.

Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation (2018)
Journal Article
Rashid, M., Idris, M. I., Horrocks, B. R., Healy, N., Goss, J. P., & Horsfall, A. B. (2018). Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation. Crystal Research and Technology, 53(9), Article 1800120. https://doi.org/10.1002/crat.201800120

Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid... Read More about Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation.

Silicon Carbide Oscillators for Extreme Environments (2018)
Book Chapter
Brennan, D., Chan, H., Wright, N., & Horsfall, A. (2018). Silicon Carbide Oscillators for Extreme Environments. In S. Walia, & K. Iniewski (Eds.), Low power semiconductor devices and processes for emerging applications in communications, computing, and sensing (225-252). CRC Press. https://doi.org/10.1201/9780429503634-10

This chapter provides an overview of a range of oscillator circuit topologies that are compatible with analog circuits designs and hence existing silicon carbide technology, before focusing on the realization of a high-temperature Colpitts oscillator... Read More about Silicon Carbide Oscillators for Extreme Environments.