Optical, electrical and EPR studies of GaAs:Ni.
(1986)
Book Chapter
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Kreissl, J., & Ulrici, B. (1986). Optical, electrical and EPR studies of GaAs:Ni. In H. von Bardeleben (Ed.), Defects in Semiconductors 14. Proceedings of the 14th International Conference on Defects in Semiconductors (ICDS-14), Paris, France, 1986 (669-674). Trans Tech Publications
Outputs (5)
Optical studies of GaAs:Ti (1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., Nash, K., & Skolnick, M. (1986). Optical studies of GaAs:Ti. Journal of physics. C. Solid state physics, 19, L525-L529. https://doi.org/10.1088/0022-3719/19/23/004
Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of Crt<SUB>Ga</SUB>³⁺ (1986)
Journal Article
Halliday, D., Ulrici, W., & Eaves, L. (1986). Optically induced changes of the Cr-related absorption lines in GaP:Cr-evidence for internal transitions of CrtGa³⁺. Journal of physics. C. Solid state physics, 19, L683-L687. https://doi.org/10.1088/0022-3719/19/29/003
Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines (1986)
Journal Article
Eaves, L., Skolnick, M., & Halliday, D. (1986). Comment on the time-resolved photoluminescence study of MBE-growth-induced defect lines. Journal of physics. C. Solid state physics, 19, L445-L446. https://doi.org/10.1088/0022-3719/19/20/005
Vanadium in GaAs and GaP (1986)
Journal Article
Ulrici, W., Eaves, L., Friedland, K., Halliday, D., & Kreissl, J. (1986). Vanadium in GaAs and GaP. Materials Science Forum, 10-12, 639-644