Outputs (2)

Facile technique for the removal of metal contamination from graphene (2015)
Journal Article
Wells, G., Hunt, M., Hopf, T., Vassilevski, K., Escobedo-Cousin, E., Horsfall, A., …O'Neill, A. (2015). Facile technique for the removal of metal contamination from graphene. Journal of Vacuum Science and Technology B, 33(5), Article 051802. https://doi.org/10.1116/1.4928422

Metal contamination deposited on few-layer graphene (3 ± 1 monolayers) grown on SiC(0001) was successfully removed from the surface, using low cost adhesive tape. More than 99% of deposited silver contamination was removed from the surface via peelin... Read More about Facile technique for the removal of metal contamination from graphene.

Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates (2015)
Journal Article
Hopf, T., Vassilevski, K., Escobedo-Cousin, E., King, P., Wright, N., O'Neill, A., …Hunt, M. (2015). Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates. Materials Science Forum, 821-823, 937-940. https://doi.org/10.4028/www.scientific.net/msf.821-823.937

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3 was grown by atomic layer deposition to function... Read More about Electrical characterization of epitaxial graphene field-effect transistors with high-k Al2O3 gate dieletric fabricated on SiC substrates.