Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures
(2016)
Journal Article
Idris, M., Weng, M., Chan, H., Murphy, A., Clark, D., Young, R., Ramsay, E., Wright, N., & Horsfall, A. (2016). Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures. Journal of Applied Physics, 120(21), Article 214902. https://doi.org/10.1063/1.4969050
In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies ha... Read More about Instability of phosphorous doped SiO2 in 4H-SiC MOS capacitors at high temperatures.