Outputs (2)

Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing (2022)
Journal Article
Idris, M. I., & Horsfall, A. (2022). Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing. Crystals, 12(8), Article 1111. https://doi.org/10.3390/cryst12081111

Enhancement-mode 4H-SiC MOSFETs utilising an aluminium oxide (Al2O3) dielectric without the requirement for an underlying silicon oxide (SiO2) layer have been shown to have a field effect mobility of 150 cm2V−1s−1 and a subthreshold swing of 160 mV/d... Read More about Increased Mobility in 4H-SiC MOSFETs by Means of Hydrogen Annealing.

Single event burnout sensitivity of SiC and Si (2022)
Journal Article
Littlefair, M. T. M., Simdyankin, S., Turvey, S., Groves, C., & Horsfall, A. B. (2022). Single event burnout sensitivity of SiC and Si. Semiconductor Science and Technology, 37(6), Article 065013. https://doi.org/10.1088/1361-6641/ac668c

Exposure to ionizing radiation has the potential to catastrophically modify the operation, and destroy, electronic components in microseconds. The electrification of aircraft necessitates the need to use the most power dense and lowest loss semicondu... Read More about Single event burnout sensitivity of SiC and Si.