First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface
(2019)
Journal Article
Alsnani, H., Goss, J., Briddon, P., Rayson, M., & Horsfall, A. (2019). First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface. physica status solidi (a) – applications and materials science, 216(17), Article 1900328. https://doi.org/10.1002/pssa.201900328
We have studied the carbon vacancy in bulk 4H‐SiC and in the vicinity of an SiO /(0001)‐4H‐SiC interface using density functional theory. We find that migration is hindered in the immediate vicinity of the interface, with the energy barrier for diffu... Read More about First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO2/4H‐SiC Interface.