Outputs (4)

Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer (2015)
Journal Article
Ullah, M., Lin, Y.-H., Muhieddine, K., Lo, S.-C., Anthopoulos, T. D., & Namdas, E. B. (2016). Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer. Advanced Optical Materials, 4(2), 231-237. https://doi.org/10.1002/adom.201500474

The performance of solution and low-temperature processed hybrid light-emitting field-effect transistors is enahnced by a new development strategy. The manipulation of the work function at the oxide/polymer interface is presented for achieving high a... Read More about Hybrid Light-Emitting Transistors Based on Low-Temperature Solution-Processed Metal Oxides and a Charge-Injecting Interlayer.

Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence. (2015)
Journal Article
Ullah, M., Yambem, S. D., Moore, E. G., Namdas, E. B., & Pandey, A. K. (2015). Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence. Advanced Electronic Materials, 1(12), Article 1500229. https://doi.org/10.1002/aelm.201500229

The role of triplet excitons in rubrene/C60 heterojunctions is investigated through detailed spectroscopic studies of triplet generation routes in the neat and heterojunction films of rubrene and C60. Time-correlated single-photon counting experiment... Read More about Singlet Fission and Triplet Exciton Dynamics in Rubrene/Fullerene Heterojunctions: Implications for Electroluminescence..

Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios. (2015)
Journal Article
Muhieddine, K., Ullah, M., Maasoumi, F., Burn, P. L., & Namdas, E. B. (2015). Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios. Advanced Materials, 27(42), 6677-6682. https://doi.org/10.1002/adma.201502554

Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.

Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors (2015)
Journal Article
Ullah, M., Armin, A., Tandy, K., Yambem, S. D., Burn, P. L., Meredith, P., & Namdas, E. B. (2015). Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors. Scientific Reports, 5, Article 8818. https://doi.org/10.1038/srep08818

Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual... Read More about Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors.