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Professor Stewart Clark's Outputs (198)

Structural refinement and stability of silicon XII (1996)
Presentation / Conference Contribution
Maclean, J., Hatton, P., Crain, J., Piltz, R., & Clark, S. (1996, December). Structural refinement and stability of silicon XII. Presented at EUROPEAN POWDER DIFFRACTION: EPDIC IV, PTS 1 AND 2 Philips Anal X Ray; CLRC Daresbury Lab, BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND

Structure and properties of silicon XII: A complex tetrahedrally bonded phase. (1995)
Journal Article
Piltz, R., Maclean, J., Clark, S., Ackland, G., Hatton, P., & Crain, J. (1995). Structure and properties of silicon XII: A complex tetrahedrally bonded phase. Physical Review B (Condensed Matter), 52(6), 4072-4085. https://doi.org/10.1103/physrevb.52.4072

Angle-dispersive powder diffraction using an image-plate area detector and synchrotron radiation have been used in conjuction with first-principles pseudopotential calculations to examine the structural, electronic, and vibrational properties of the... Read More about Structure and properties of silicon XII: A complex tetrahedrally bonded phase..

Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide. (1995)
Journal Article
Hsueh, H., Vass, H., Clark, S., & Crain, J. (1995). Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide. European Physical Society Letters, 31(3), 151-155. https://doi.org/10.1209/0295-5075/31/3/005

A combination of high-sensitivity Raman scattering and ab initio computer simulations is used to explore the lattice dynamics of the prototypical layered semiconductor GeS under hydrostatic pressure. The observed and calculated pressure responses of... Read More about Breakdown of Rigid-Unit Vibrations in Layered Semiconductors under Pressure: Application to Germanium Sulfide..

Metastable Structures Of Tetrahedral Semiconductors (1994)
Presentation / Conference Contribution
Hatton, P., Crain, J., Ackland, G., Clark, S., & Piltz, R. (1994, December). Metastable Structures Of Tetrahedral Semiconductors. Presented at Joint Conference of the International-Association-for-Research-and-Advancement-of-High-Pressure-Science-and-Technology/American-Physical-Society-Topical-Group-on-Shock-Compression-of-Condensed-Matter, Colorado Springs

Tetrahedral structures and phase transitions in III-V semiconductors. (1994)
Journal Article
Crain, J., Piltz, R., Ackland, G., Clark, S., Payne, M., Milman, V., …Nam, Y. (1994). Tetrahedral structures and phase transitions in III-V semiconductors. Physical Review B (Condensed Matter), 50(12), 8389-8401. https://doi.org/10.1103/physrevb.50.8389

The BC8 structure (body-centered cubic with eight atoms per cell) is a known pressure-induced modification of both silicon and germanium. However, its diatomic analogue [the SC16 structure (a simple cubic lattice with a basis of 16 atoms)] has never... Read More about Tetrahedral structures and phase transitions in III-V semiconductors..

Theoretical study of high-density phases of covalent semiconductors. II. Empirical treatment. (1994)
Journal Article
Clark, S., Ackland, G., & Crain, J. (1994). Theoretical study of high-density phases of covalent semiconductors. II. Empirical treatment. Physical Review B (Condensed Matter), 49(8), 5341-5352. https://doi.org/10.1103/physrevb.49.5341

We show that a simple pairwise model for covalent materials provides a good description of the high-density fourfold-coordinated metastable phases BC8 and ST12, in agreement with experimental results and ab initio calculations. We use this potential... Read More about Theoretical study of high-density phases of covalent semiconductors. II. Empirical treatment..

Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment. (1994)
Journal Article
Crain, J., Clark, S., Ackland, G., Payne, M., Milman, V., Hatton, P., & Reid, B. (1994). Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment. Physical Review B (Condensed Matter), 49(8), 5329-5340. https://doi.org/10.1103/physrevb.49.5329

We present detailed calculations using the total-energy pseudopotential method in the local-density approximation of the relative stability and pressure-induced behavior of complex tetrahedrally bonded structures formed metastably in silicon and germ... Read More about Theoretical study of high-density phases of covalent semiconductors. I. Ab initio treatment..