On the identification of the oxygen vacancy in HfO(2)
(2011)
Journal Article
Clark, S., Lin, L., & Robertson, J. (2011). On the identification of the oxygen vacancy in HfO(2). Microelectronic Engineering, 88(7), 1464-1466. https://doi.org/10.1016/j.mee.2011.03.078
The single positively charge oxygen vacancy in HfO2 is found to undergo a symmetry breaking distortion to a C2v symmetry, driven by electron localization, which is consistent with the experimentally observed electron spin resonance signal. This compl... Read More about On the identification of the oxygen vacancy in HfO(2).