Professor Dagou Zeze's Outputs (2)

Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy (2010)
Journal Article
Cirlin, G., Dubrovskii, V., Samsonenko, Y., Bouravleuv, A., Durose, K., Proskruryakov, Y., Mendes, B., Bowen, L., Kaliteevski, M., Abram, R., & Zeze, D. (2010). Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy. Physical review B - Condensed Matter and Materials Physics, 82(3), Article 035302. https://doi.org/10.1103/physrevb.82.035302

We report on the Au-free molecular beam epitaxy growth of coherent GaAs nanowires directly on Si(111) substrates. The growth is catalyzed by liquid Ga droplets formed in the openings of a native oxide layer at the initial growth stage. Transmission e... Read More about Self-catalyzed, pure zincblende GaAs nanowires grown on Si(111) by molecular beam epitaxy.

The morphology and electrical conductivity of single-wall carbon nanotube thin films prepared by the Langmuir-Blodgett technique (2010)
Journal Article
Venet, C., Pearson, C., Jombert, A., Mabrook, M., Zeze, D., & Petty, M. (2010). The morphology and electrical conductivity of single-wall carbon nanotube thin films prepared by the Langmuir-Blodgett technique. Colloids and Surfaces A: Physicochemical and Engineering Aspects, 354(1-3), 113-117. https://doi.org/10.1016/j.colsurfa.2009.07.037

Thin films containing single-wall carbon nanotubes (SWCNTs) have been prepared using the Langmuir-Blodgett (LB) technique. Atomic force microscopy has been used to investigate the morphology of these films. Films of pure SWCNTs were in the form of a... Read More about The morphology and electrical conductivity of single-wall carbon nanotube thin films prepared by the Langmuir-Blodgett technique.