Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
(1991)
Journal Article
Stanley, C., Holland, M., Kean, A., Stanaway, M., Grimes, R., & Chamberlain, J. (1991). Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1. Applied Physics Letters, 58(5), 478-480. https://doi.org/10.1063/1.104613
The effect of varying the temperature (T cr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spec... Read More about Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1.