C.R. Stanley
Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
Stanley, C.R.; Holland, M.C.; Kean, A.H.; Stanaway, M.B.; Grimes, R.T.; Chamberlain, J.M.
Authors
M.C. Holland
A.H. Kean
M.B. Stanaway
R.T. Grimes
J.M. Chamberlain
Abstract
The effect of varying the temperature (T cr) of an As4→As2 cracker furnace between 600 and 700 °C on the properties of GaAs grown by molecular beam epitaxy has been evaluated using 4–300 K Hall measurements and 4.2 K far‐infrared photoconduction spectroscopy, in an extension of earlier work on high‐mobility material (Ref. 1). The residual donors are silicon and sulphur with mid‐1013 cm−3 concentrations under As2‐growth conditions (T cr=700 °C). By lowering T cr, the silicon concentration is reduced substantially, leaving sulphur as the principal impurity. A 15‐μm‐thick layer grown with T cr=650 °C has measured free‐electron densities of ≊2.8×1013 cm−3 and peak mobilities ≊4×105 cm2 V−1 s−1 at ≊28–42 K, the highest ever recorded in bulk GaAs.
Citation
Stanley, C., Holland, M., Kean, A., Stanaway, M., Grimes, R., & Chamberlain, J. (1991). Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1. Applied Physics Letters, 58(5), 478-480. https://doi.org/10.1063/1.104613
Journal Article Type | Article |
---|---|
Publication Date | Feb 4, 1991 |
Deposit Date | Aug 18, 2015 |
Publicly Available Date | Aug 19, 2015 |
Journal | Applied Physics Letters |
Print ISSN | 0003-6951 |
Electronic ISSN | 1077-3118 |
Publisher | American Institute of Physics |
Peer Reviewed | Peer Reviewed |
Volume | 58 |
Issue | 5 |
Pages | 478-480 |
DOI | https://doi.org/10.1063/1.104613 |
Public URL | https://durham-repository.worktribe.com/output/1580401 |
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Copyright Statement
© 1991 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 58, 478 (1991) and may be found at http://dx.doi.org/10.1063/1.104613
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