Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack
(2008)
Journal Article
Mahapatra, R., Chakraborty, A., Horsfall, A., Wright, N., Beamson, G., & Coleman, K. (2008). Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack. Applied Physics Letters, 92(4), Article 042904. https://doi.org/10.1063/1.2839314
The band alignment of HfO2/SiO2/SiC gate dielectric stack has been investigated by x-ray photoelectron spectroscopy and electrical characterization. Two types of valence band offsets are observed in the stack layer; the smaller value of 1.5 eV corres... Read More about Energy-band alignment of HfO2/SiO2/SiC gate dielectric stack.