Surface Functionalisation of Silicon Carbide Quantum Dots

Rashid, M.; Horrocks, B.R.; Healy, N.; Goss, J.P.; Chan, H.K.; Horsfall, A.B.

Abstract

Silicon carbide (SiC) nanostructures are appealing as non-toxic, water-stable and oxidation-resistant nanomaterials. Owing to these unique properties, three-dimensionally confined SiC nanostructures, namely SiC quantum dots (QDs), have found applications in the bioimaging of living cells. Photoluminescence (PL) investigations, however, have revealed that across the polytypes: 3C-, 4H- and 6H-SiC, excitation wavelength–dependent PL is observed for larger sizes but deviates for sizes smaller than approximately 3 nm, thus exhibiting a dual-feature in the PL spectra. Additionally, nanostructures of varying polytypes and bandgaps exhibit strikingly similar PL emission centered at approximately 450 nm. At this wavelength, 3C-SiC emission is above the bulk bandgap as expected of quantum size effects, but for 4H-SiC and 6H-SiC the emissions are below bandgap. 4H-SiC is a suitable polytype to study these effects.

Citation

Rashid, M., Horrocks, B., Healy, N., Goss, J., Chan, H., & Horsfall, A. (2018). Surface Functionalisation of Silicon Carbide Quantum Dots. In S. Walia, & K. Iniewski (Eds.), Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing and Sensing (181-199). CRC Press. https://doi.org/10.1201/9780429503634-8

• Online Publication Date: Aug 6, 2018
• Publication Date: 2018-08
• Deposit Date: Oct 1, 2018
• Pages: 181-199
• Series Title: Devices, circuits, and systems
• Book Title: Low Power Semiconductor Devices and Processes for Emerging Applications in Communications, Computing and Sensing
• ISBN: 9780429503634
• DOI: https://doi.org/10.1201/9780429503634-8
• Public URL: https://durham-repository.worktribe.com/output/1657948